Inclusion of Silicon Delta-doped Two-dimensional Electron Gas Layer on Multi-quantum Well Nano-structures of Blue Light Emitting Diodes
作者： Keun-Joo Kim
DOI: 10.4313/TEEM.2004.5.5.173
关键词: Acceptor 、 Light emission 、 Optoelectronics 、 Quantum tunnelling 、 Quantum well 、 Silicon 、 Materials science 、 Chemical vapor deposition 、 Diode 、 Doping
摘要: The influence of heavily Si impurity doping in the GaN barrier InGaN/GaN multi-quantum well structures blue light emitting diodes were investigated by growing samples metal-organic chemical vapor deposition. delta-doped sample was compared to with undoped barrier. shows tunneling behavior and forms energy level 0.32 eV for photoemission 450-nm band. photo-luminescence blue-shifted broad band radiative transition due inclusion layer indicating that delta effect acts form higher than quantum well. dislocation may provide carrier channel plays as a source acceptor. During hot carrier, there no emission.
koreascience.or.kr 参考文章(20)
Masahiro Tsuchiya, Hiroyuki Sakaki, Tunneling Spectroscopy of Resonant Transmission Coefficient in Double Barrier Structure Japanese Journal of Applied Physics. ,vol. 30, pp. 1164- 1168 ,(1991) , 10.1143/JJAP.30.1164
E. F. Schubert, Delta doping of III–V compound semiconductors: Fundamentals and device applications Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 8, pp. 2980- 2996 ,(1990) , 10.1116/1.576617
D. C. Look, J. R. Sizelove, Dislocation Scattering in GaN Physical Review Letters. ,vol. 82, pp. 1237- 1240 ,(1999) , 10.1103/PHYSREVLETT.82.1237
T. Egawa, H. Ishikawa, M. Umeno, T. Jimbo, Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire Applied Physics Letters. ,vol. 76, pp. 121- 123 ,(2000) , 10.1063/1.125676
Kozo Osamura, Shigehisa Naka, Yotaro Murakami, Preparation and optical properties of Ga1−xInxN thin films Journal of Applied Physics. ,vol. 46, pp. 3432- 3437 ,(1975) , 10.1063/1.322064
Yifei Zhang, Jasprit Singh, Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor Journal of Applied Physics. ,vol. 85, pp. 587- 594 ,(1999) , 10.1063/1.369493
A. F. Wright, Ulrike Grossner, The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN Applied Physics Letters. ,vol. 73, pp. 2751- 2753 ,(1998) , 10.1063/1.122579
Keunjoo Kim, Sang Jo Chung, Thermal quenching effect of an infrared deep level in Mg-doped p-type GaN films Applied Physics Letters. ,vol. 80, pp. 1767- 1769 ,(2002) , 10.1063/1.1456547
Hidenori Ishikawa, Setsuko Kobayashi, Y. Koide, S. Yamasaki, S. Nagai, J. Umezaki, M. Koike, Masanori Murakami, Effects of surface treatments and metal work functions on electrical properties at p-GaN/metal interfaces Journal of Applied Physics. ,vol. 81, pp. 1315- 1322 ,(1997) , 10.1063/1.363912
G. Y. Zhao, M. Adachi, H. Ishikawa, T. Egawa, M. Umeno, T. Jimbo, Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition Applied Physics Letters. ,vol. 77, pp. 2195- 2197 ,(2000) , 10.1063/1.1314883