Multi-rotation epitaxial growth apparatus and reactors incorporating same
作者： Michael John Bergmann , David Dean Seibel , David Todd Emerson
DOI:
关键词: Structural engineering 、 Rotation 、 Rotational axis 、 Susceptor 、 Mechanical engineering 、 Engineering
摘要: A susceptor apparatus for use in a CVD reactor includes main platter with central gear. The has opposite first and second sides, recess formed the side, plurality of circumferentially spaced-apart pockets side. gear is positioned within satellite platters are individually rotatable respective pockets. Each pocket peripheral wall an opening communication recess. teeth extend into each via openings engage planet associated platter. Rotation about its rotational axis causes to rotate their individual axes.
lens.org 参考文章(18)
Peter M. Frijlink, Epitaxial growth reactor provided with a planetary support ,(1989)
Vincenzo Ogliari, Franco Preti, A susceptor provided with indentations and an epitaxial reactor which uses the same ,(2003)
Peter M. Frijlink, Method of manufacturing a semiconductor device by vapor phase deposition using multiple inlet flow control ,(1987)
Vittorio Pozzetti, Vincenzo Ogliari, Franco I Milano Preti, An epitaxial reactor, susceptor and gas-flow system ,(1995)
Kenji Tsujita, Shigenori Kouno, Ken Ohmura, Carrier for developing electrostatic image ,(1991)
Michael James Paisley, Joseph John Sumakeris, Gas driven planetary rotation apparatus and methods for forming silicon carbide layers ,(2003)
Junji Komeno, Kazushige Shiina, Film-forming device with a substrate rotating mechanism ,(2001)
Richard H Winings, Methods and apparatus for treating semi-conductive materials with gases ,(1966)
Jerry Kidd, Danny Caudle, Platform assembly and method ,(2004)