Dual-wavelength light-emitting diode
作者： Tien Pei Lee
DOI:
关键词: Diode 、 Indium phosphide 、 Chemistry 、 Optics 、 Light-emitting diode 、 Layer (electronics) 、 Optoelectronics 、 Substrate (electronics) 、 p–n junction 、 Epitaxy 、 Electrical contacts
摘要: A dual-wavelength light-emitting diode (10) is disclosed wherein at least two quaternary layers (102 and 104) are epitaxially grown on indium phosphide substrate (100) a top layer (105) of the opposite conductivity type to establish junction (121) in topmost layer. An isolation channel (106) cuts through epitaxial divides device into separate regions. dopant diffused one regions order pn (122) bottom Independent electrical contacts (107 108) bonded each an connection junctions The can be effectively heat sinked by mounting side beryllium oxide sink (200) onto which gold bonding pads (201 202) have been plated.
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