Response Time of Metal-Insulator-Metal Tunnel Junctions

作者: Moichiro Nagae

DOI: 10.1143/JJAP.11.1611

关键词: Fermi energyAtomic physicsScatteringElectronVoltageRectangular potential barrierElectric chargeExponential decayChemistryBiasing

摘要: The current response to a step input voltage is calculated on the basis of assumption that decay each elementary caused by scattering slow enough. exponential not assumed. A general expression for time τ obtained in case square potential-barrier model. When bias V so small eVΔe, where -e electron charge and Δe≡\hbar{w(2m/W)1/2}-1 (w barrier thickness, m mass W height potential above Fermi energy), approximately given \hbar/(2Δe); τ≈1.7×10-15 s Δe≈0.2 eV are when w=20 W=4 eV. At large biases consists two parts: one part with form \hbar/(eV)+\hbar/Δξ (Δξ w-independent ΔξΔe) other which responds instantaneously voltage.

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