An origin of unintentional doping in transition metal dichalcogenides: the role of hydrogen impurities.
作者： Youngho Kang , Seungwu Han
DOI: 10.1039/C6NR08555E
关键词: Charge (physics) 、 Doping 、 Monolayer 、 Fermi level 、 Chemistry 、 Impurity 、 Condensed matter physics 、 Nanotechnology 、 Polarity (physics) 、 Hydrogen 、 Transition metal
摘要: … transition level of hydrogen impurities relative to band edges of TMDs successfully … Fermi level of TMDs. To show the doping polarity more clearly, we define the relative Fermi level (E …
rsc.org
sci-hub.se 参考文章(68)
Chih-Pin Lu, Guohong Li, Jinhai Mao, Li-Min Wang, Eva Y. Andrei, Bandgap, mid-gap states, and gating effects in MoS2 Nano Letters. ,vol. 14, pp. 4628- 4633 ,(2014) , 10.1021/NL501659N
Lin Zhou, Kai Xu, Ahmad Zubair, Albert D. Liao, Wenjing Fang, Fangping Ouyang, Yi-Hsien Lee, Keiji Ueno, Riichiro Saito, Tomás Palacios, Jing Kong, Mildred S. Dresselhaus, Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2 Journal of the American Chemical Society. ,vol. 137, pp. 11892- 11895 ,(2015) , 10.1021/JACS.5B07452
Ji-Young Noh, Hanchul Kim, Yong-Sung Kim, Stability and electronic structures of native defects in single-layer MoS 2 Physical Review B. ,vol. 89, pp. 205417- ,(2014) , 10.1103/PHYSREVB.89.205417
Xidong Duan, Chen Wang, Anlian Pan, Ruqin Yu, Xiangfeng Duan, Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges Chemical Society Reviews. ,vol. 44, pp. 8859- 8876 ,(2015) , 10.1039/C5CS00507H
Zongyou Yin, Hai Li, Hong Li, Lin Jiang, Yumeng Shi, Yinghui Sun, Gang Lu, Qing Zhang, Xiaodong Chen, Hua Zhang, Single-Layer MoS2 Phototransistors ACS Nano. ,vol. 6, pp. 74- 80 ,(2012) , 10.1021/NN2024557
Youngho Kang, Byung Du Ahn, Ji Hun Song, Yeon Gon Mo, Ho-Hyun Nahm, Seungwu Han, Jae Kyeong Jeong, Hydrogen Bistability as the Origin of Photo-Bias-Thermal Instabilities in Amorphous Oxide Semiconductors Advanced Electronic Materials. ,vol. 1, pp. 1400006- ,(2015) , 10.1002/AELM.201400006
F. Schwierz, J. Pezoldt, R. Granzner, Two-dimensional materials and their prospects in transistor electronics Nanoscale. ,vol. 7, pp. 8261- 8283 ,(2015) , 10.1039/C5NR01052G
Yuan Huang, Eli Sutter, Jerzy T. Sadowski, Mircea Cotlet, Oliver L.A. Monti, David A. Racke, Mahesh R. Neupane, Darshana Wickramaratne, Roger K. Lake, Bruce A. Parkinson, Peter Sutter, Tin disulfide-an emerging layered metal dichalcogenide semiconductor: materials properties and device characteristics. ACS Nano. ,vol. 8, pp. 10743- 10755 ,(2014) , 10.1021/NN504481R
Chris G. Van de Walle, Hydrogen as a cause of doping in zinc oxide Physical Review Letters. ,vol. 85, pp. 1012- 1015 ,(2000) , 10.1103/PHYSREVLETT.85.1012
Thanh Cuong Nguyen, Minoru Otani, Susumu Okada, Semiconducting Electronic Property of Graphene Adsorbed on (0001) Surfaces of SiO2 Physical Review Letters. ,vol. 106, pp. 106801- 106801 ,(2011) , 10.1103/PHYSREVLETT.106.106801