Enhancement of band gap and photoconductivity in gamma indium selenide due to swift heavy ion irradiation
作者： R Sreekumar , R Jayakrishnan , C Sudha Kartha , KP Vijayakumar , SA Khan
DOI: 10.1063/1.2829812
关键词: Photoconductivity 、 Selenide 、 Materials science 、 Fluence 、 Swift heavy ion 、 Irradiation 、 Optoelectronics 、 Photoluminescence 、 Band gap 、 Molecular physics 、 Ion
摘要: γ‐In2Se3 thin films prepared at different annealing temperatures ranging from 100to400°C were irradiated using 90MeV Si ions with a fluence of 2×1013ions∕cm2. X-ray diffraction analysis proved that there is no considerable variation in structural properties the due to swift heavy ion irradiation. However, photosensitivity and sheet resistance samples increased It was observed sample, which had negative photoconductivity, exhibited positive after The photoconductivity combined effect trapping photoexcited electrons, traps 1.42 1.26eV, above valence band along destruction minority carriers, created during illumination, through recombination. Photoluminescence study revealed emission transition recombination center, 180meV band. Optical absorption defects present 1.26eV annealed out...
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