Interface-type resistive switching in perovskite materials

摘要: Resistive switching (RS) is currently one of the hot topics in frontier between materials science and microelectronics, crosslinking both research communities. Among different types RS phenomena that have been reported, this review focuses particularly on interface-type RS, for which change resistance related to a modification properties occurring at interface over entire electrode area. In particular we summarized most interesting reports perovskite oxides, versatile oxide crystal structure presents plethora functional depending its exact composition structural symmetry. We present relevant mechanisms inducing such as valence change, due combination oxygen vacancy drift redox reactions; electronic correlations; ferroelectricity. For each case explain physico-chemical processes triggered by application an external voltage (or current), ultimately lead metal oxide. Special attention paid material aspects switching, how characteristics can be improved or cation doping off-stoichiometry, introduction additional layers changing nature electrodes. Recent progress memristive devices based perovskites also reported figures merit reached are compared those obtained state-of-the-art filamentary type binary oxides.