Microstructure of low-dose neutron-irradiated Si3N4 and SiAlON ceramics after thermal annealing
作者： Areerak Rueanngoen , Masamitsu Imai , Katsumi Yoshida , Toyohiko Yano
DOI: 10.1016/J.PNUCENE.2014.07.035
关键词: Crystallographic defect 、 Microstructure 、 Silicon nitride 、 Silicon 、 Dislocation 、 Grain boundary 、 Sialon 、 Materials science 、 Thermal stability 、 Composite material
摘要: Abstract Four kinds of silicon nitride-related ceramics were neutron irradiated up to 8.5 × 10 24 n/m 2 ( E > 0.1 MeV) at 563 K. Induced swelling almost recovered by thermal annealing 1473 K. Microstructure the as-irradiated nitride-based and those after 1123, 1223 1473 K observed with a high-resolution transmission electron microscope (HREM) in order clarify their feature stability. HREM microstructures specimens revealed that atomic configuration projected onto basal plane was similar as perfect crystalline arrangement without lattice distortion. It confirmed only point defects or point-like generated during irradiation present condition. In addition, microstructure analysis thermally annealed did not reveal any voids along grain boundaries triple junctions. Furthermore, formations dislocation loops 1473 K, all Si 3 N 4 SiAlON polymorphs.
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