First principle calculations and opto-electric enhancement in laser ablated GZO thin films

摘要: Optical and electrical properties of Ga-doped Zinc Oxide (GZO) has been studied in the present article. Density functional theory Hubbard U (DFT + Ud + Up) based first principle calculations were employed for theoretical estimation whereas Laser ablation method used to fabricate GZO thin films on p-GaN, Al2O3 p-Si substrate experimental analysis. Single crystal growth with (002) preferred crystallographic orientation shown X-ray diffraction graphs. The elemental composition all samples via EDS (energy dispersive X-ray) spectroscopy, no other unwanted impurity related peaks found which indicates impurity-free GZO. Noodle, seed granular-like structures GZO/GaN, GZO/Al2O3, GZO/Si have revealed Field-emission scanning electron microscopy micrographs respectively. morphological analysis suggested GaN as best candidate uniform better quality films. Highest carrier mobility (53 cm2/V s) higher concentration (> 1020 cm−3) low (1800) laser shots. Fivefold photoluminescence enhancement noodle-like structure GZO/GaN compared GZO/Al2O3 recorded. As supposed be a more favorable enhanced optical points toward shape-driven properties. Theoretical (3.539 eV) (3.43, 3.6 eV) values band-gap quite comparable. Moreover, lowest resistivity (3.5 × 10−4 Ω cm) 80% transmittance is evident successful alternate ITO.