作者: Yosuke Komasaki , Masakiyo Tsunoda , Shinji Isogami , Migaku Takahashi
DOI: 10.1063/1.3072827
关键词: Grain size 、 Epitaxy 、 Tunnel magnetoresistance 、 Lattice constant 、 Materials science 、 Wafer 、 Biasing 、 Magnetoresistance 、 Ferromagnetism 、 Condensed matter physics 、 Metallurgy
摘要: Pseudo-single-crystal Cu underlayer (UL) with thermal tolerance was obtained on bare Si wafer by employing a diffusion-blocking layer. Fe4N layer fabricated the UL has an epitaxial relationship and large grain diameter. Magnetic tunnel junctions in stacking sequence of Fe4N/MgO/CoFeB exhibited inverse magnetoresistance (TMR) effect at room temperature. The largest magnitude TMR ratio, −75.1%, bias voltage Vb=−250 mV, where electrons flow from CoFeB to Fe4N. ratio is due improvement crystallinity film because small lattice misfit between Cu.