作者: P. Guerriero , F. Di Napoli , M. Coppola , S. Daliento
DOI: 10.1109/SPEEDAM.2016.7525991
关键词: Diode 、 Solar cable 、 Voltage 、 Electronic engineering 、 MOSFET 、 Solar cell 、 Materials science 、 Electronic circuit 、 Photovoltaic system 、 Power MOSFET 、 Electrical engineering
摘要: Overtemperature occurring in silicon solar panels subject to partial shadowing are reduced by means of a new bypass circuit. The circuit exploits series connected power MOSFET which sustains part the reverse voltage developing across shaded cell. Neither supply nor control logic required, resulting an appealing advantage with respect other active circuits. Experiments performed on commercial mono-crystalline panel evidenced reduction cell, if compared traditional diode, about 50%, corresponding temperature decease approaching 22°C.