Electronic and magnetic properties of FeSe thin film prepared on GaAs (001) substrate by metal-organic chemical vapor deposition

作者: K. W. Liu , J. Y. Zhang , D. Z. Shen , C. X. Shan , B. H. Li

DOI: 10.1063/1.2751578

关键词: ParamagnetismTetragonal crystal systemCurie temperatureFerromagnetismThin filmMagnetic semiconductorSubstrate (electronics)Analytical chemistryMaterials scienceChemical vapor depositionCondensed matter physics

摘要: FeSe film was prepared on GaAs (001) substrate by low pressure metal-organic chemical vapor deposition. The x-ray diffraction measurement indicated that the sample preferentially oriented with tetragonal structure. structure relationship between epilayer and has been studied. critical behavior in temperature-dependent resistivity at ∼290K is close to Curie temperature, which confirmed transformation from ferromagnetism paramagnetism could be responsible for behavior.

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