作者: K. W. Liu , J. Y. Zhang , D. Z. Shen , C. X. Shan , B. H. Li
DOI: 10.1063/1.2751578
关键词: Paramagnetism 、 Tetragonal crystal system 、 Curie temperature 、 Ferromagnetism 、 Thin film 、 Magnetic semiconductor 、 Substrate (electronics) 、 Analytical chemistry 、 Materials science 、 Chemical vapor deposition 、 Condensed matter physics
摘要: FeSe film was prepared on GaAs (001) substrate by low pressure metal-organic chemical vapor deposition. The x-ray diffraction measurement indicated that the sample preferentially oriented with tetragonal structure. structure relationship between epilayer and has been studied. critical behavior in temperature-dependent resistivity at ∼290K is close to Curie temperature, which confirmed transformation from ferromagnetism paramagnetism could be responsible for behavior.