4.8 μm vertical emitting PbTe quantum-well lasers based on high-finesse EuTe/Pb1−xEuxTe microcavities
作者： G. Springholz , T. Schwarzl , M. Aigle , H. Pascher , W. Heiss
DOI: 10.1063/1.126172
关键词: Optoelectronics 、 Lasing threshold 、 Laser 、 Laser pumping 、 Quantum dot laser 、 Optical microcavity 、 Tunable laser 、 Quantum well 、 Distributed feedback laser 、 Materials science
摘要: Vertical laser emission at 4.8 μm from PbTe quantum wells in high-finesse Pb0.95Eu0.05Te/EuTe microcavity structures temperatures between 35 and 85 K is reported. The vertical-cavity structure was grown by molecular-beam epitaxy on BaF2(111) substrates, consisted of a 2λ cavity with four 20 nm the antinodes. Laser excited optical pumping pulsed Nd:YVO4 laser. comparison mode positions envelope function calculations quantum-well energy levels indicates that, this temperature range, lasing due to transitions ground level oblique valleys conduction valence bands.
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