The synthesis of Nb 3 Ge by RF sputtering

摘要: The conditions necessary for the formation of Nb 3 Ge by low-pressure rf sputtering with a superconducting transition temperatureT c >21 K have been investigated. Samples deposited onto cooled substrates so that film is first amorphous and then crystallized subsequent annealing, hot substrates, in which case crystalline upon deposition. highestT samples were obtained substrate temperature 735±25° C. optimum same as annealing crystallizing films substrates. Special are single-phase A15 an optimumT . We utilized collisions sputtered atoms undergo gas molecules to thermalize atoms. report here on both krypton argon.