Correlation of ETL in perovskite light-emitting diodes and the ultra-long rise time in time-resolved electroluminescence
作者： Minhuan Wang , Jiming Bian , Yulin Feng , Yadong Zhang , Hongzhu Liu
DOI: 10.1016/J.MSSP.2018.02.017
关键词: Electron transport layer 、 Diode 、 Hysteresis 、 Electroluminescence 、 Optoelectronics 、 Materials science 、 Perovskite (structure) 、 Rise time 、 Light-emitting diode 、 Range (particle radiation)
摘要: Abstract Here, two series CH3NH3PbI3 based perovskite light-emitting diodes (Pe-LEDs) were synthesized with TiO2 and SnO2 as electron transport layer (ETL), respectively. An exceptional ultra-long rise time (Tr) persisting to tens of seconds was observed in time-resolved electroluminescence (EL) characteristics from the Pe-LEDs driven constant voltage, which might be intrinsic MAPbI3 regardless ETL materials. Qualitatively, preferred than counterpart for faster response Pe-LED devices lower Tr. Moreover, Tr can adjusted range 10–28 s by precisely controlling thickness ETL. In addition, similar trend also confirmed dependent hysteresis index deduced current-voltage (J-V) characteristics. The mechanism interpreted means dynamics carrier injection at perovskite/ETL interface. These achievement may contribute better understanding origin slow process EL characteristics, hence favorable minimizing this detrimental effects.
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