Interband optical transitions in GaP nanowires encapsulated in GaN nanotubes
作者： M. W. Lee , H. C. Hsueh , H.-M. Lin , C.-C. Chen
DOI: 10.1103/PHYSREVB.67.161309
关键词: Nanowire 、 Work (thermodynamics) 、 Absorption (electromagnetic radiation) 、 Exciton 、 Materials science 、 Condensed matter physics 、 Electron 、 Quantum well 、 Heterojunction 、 Optoelectronics 、 Range (particle radiation)
摘要: This work investigates the optical properties of cylindrical GaP nanowires encapsulated inside GaN nanotubes (GaP@GaN). Many absorption structures are observed in range 2.0--4 eV. Calculations performed to determine quantized energy levels electrons and holes confined well. Analytical results indicate that peaks attributable interband transitions due carriers heterostructure.
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