Structural properties of porous 6H silicon carbide

作者： Pascal Newby , Jean-Marie Bluet , Vincent Aimez , Luc G. Fréchette , Vladimir Lysenko

DOI: 10.1002/PSSC.201000222

关键词: Nucleation 、 Nanotechnology 、 Raman spectroscopy 、 Current density 、 Spectral line 、 Porosity 、 Morphology (linguistics) 、 Chemical engineering 、 Silicon carbide 、 Materials science 、 Current (fluid) 、 Condensed matter physics

摘要: In this work we have studied the effect of current density and UV illumination on morphology porous SiC formed by electrochemical etching. Raman spectroscopy was also carried out, in order to correlate structure with obtained spectra. We show that is important controlling type structure, whereas plays a role pore nucleation at lower densities. The shape spectra, particular longitudinal optical (LO) peak, depends strongly nanoscale morphology. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)