60 GHz transceiver circuits in SiGe:C BiCMOS technology
作者： W. Winkler , J. Borngraber , H. Gustat , F. Korndorfer
DOI: 10.1109/ESSCIR.2004.1356623
关键词: Bicmos technology 、 Electronic circuit 、 Electronic engineering 、 Demodulation 、 Electrical engineering 、 Modulation 、 Materials science 、 High data rate 、 Transceiver 、 Amplitude-shift keying
摘要: This paper presents the design and measurement of key circuit building blocks for a high-data-rate transceiver in 60 GHz band. The adopted modulation scheme is ASK, simple configuration with high data rate. circuits presented are: LNA, oscillator, mixer, modulator demodulator. are fabricated 0.25 /spl mu/m SiGe:C BiCMOS technology.
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researchgate.net 参考文章(3)
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