The role of substrate temperature and bias in the plasma deposition from tetramethylsilane
作者： P Favia , R Lamendola , R d'Agostino
DOI: 10.1088/0963-0252/1/1/007
关键词: Chemical composition 、 Substrate (chemistry) 、 Analytical chemistry 、 Oxygen 、 Ion 、 Deposition (phase transition) 、 Tetramethylsilane 、 Chemistry 、 Argon 、 Ion plating
摘要: Thin transparent polymeric films have been deposited from low-pressure argon/tetramethylsilane radio-frequency glow discharges at controlled substrate bias and temperature. The effect of positive ion bombardment temperature on both film growth rate chemical composition has studied. An account the post-discharge fast oxidation exposed to oxygen is also given. A general deposition mechanism proposed.
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