Modulation of 2DEG in AlGaN/GaN heterostructures by P(VDF-TrFE)
作者： Ze-gao Wang , Yuan-fu Chen , Chao Chen , Xin Hao , Xing-zhao Liu
DOI: 10.1088/0268-1242/26/2/025010
关键词: Electrical resistivity and conductivity 、 Algan gan 、 Ferroelectricity 、 Heterojunction 、 Optoelectronics 、 Materials science 、 Electrical transport 、 Electric field 、 Polarization (waves) 、 Polymer
摘要: A nearly square-like ferroelectric hysteretic loop of spin-coated and crystallized poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) with a remnant polarization 2 Pr 20 µC cm−2 was obtained. The electrical transport properties the P(VDF-TrFE)/AlGaN/GaN structure were investigated. results show that carrier density Ns, mobility μ, resistivity ρ AlGaN/GaN 2DEG can be directly strongly modulated by an external electric field via polymer P(VDF-TrFE): exhibit closed loops under tuned as large 235% only changing field.
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sci-hub.se 参考文章(15)
Pingxiong Yang, David L. Carroll, John Ballato, Robert W. Schwartz, Growth and optical properties of SrBi2Nb2O9 ferroelectric thin films using pulsed laser deposition Journal of Applied Physics. ,vol. 93, pp. 9226- 9230 ,(2003) , 10.1063/1.1571219
SY Yang, Q Zhan, PL Yang, MP Cruz, YH Chu, R Ramesh, YR Wu, J Singh, W Tian, DG Schlom, None, +Capacitance-voltage characteristics of BiFeO3∕SrTiO3∕GaN heteroepitaxial structures Applied Physics Letters. ,vol. 91, pp. 022909- ,(2007) , 10.1063/1.2757089
Beihai Ma, Do-Kyun Kwon, Manoj Narayanan, U (Balu) Balachandran, Leakage current characteristics and dielectric breakdown of antiferroelectric Pb0.92La0.08Zr0.95Ti0.05O3 film capacitors grown on metal foils Journal of Physics D. ,vol. 41, pp. 205003- ,(2008) , 10.1088/0022-3727/41/20/205003
Yifei Zhang, I. P. Smorchkova, C. R. Elsass, Stacia Keller, James P. Ibbetson, Steven Denbaars, Umesh K. Mishra, Jasprit Singh, Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies Journal of Applied Physics. ,vol. 87, pp. 7981- 7987 ,(2000) , 10.1063/1.373483
Ravinder S. Dahiya, Giorgio Metta, Maurizio Valle, Andrea Adami, Leandro Lorenzelli, Piezoelectric oxide semiconductor field effect transistor touch sensing devices Applied Physics Letters. ,vol. 95, pp. 034105- ,(2009) , 10.1063/1.3184579
C.J. Zhang, Y.F. Chen, Z.G. Wang, B.L. Tian, C. Chen, X.W. Deng, M. Liu, Y. Zhang, X.Z. Liu, Y.R. Li, Growth and structure of MBE-grown PbTiO3 epilayers by using RF atomic oxygen source Journal of Crystal Growth. ,vol. 312, pp. 382- 385 ,(2010) , 10.1016/J.JCRYSGRO.2009.11.019
Yifei Zhang, Jasprit Singh, Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor Journal of Applied Physics. ,vol. 85, pp. 587- 594 ,(1999) , 10.1063/1.369493
W. Cao, S. Bhaskar, J. Li, S.K. Dey, Interfacial nanochemistry and electrical properties of Pb(Zr0.3Ti0.7)O3 films on GaN/sapphire Thin Solid Films. ,vol. 484, pp. 154- 159 ,(2005) , 10.1016/J.TSF.2005.02.034
A Sarua, Hangfeng Ji, J W Pomeroy, M J Uren, T Martin, M Kuball, Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors studied by Raman scattering Semiconductor Science and Technology. ,vol. 25, pp. 085004- ,(2010) , 10.1088/0268-1242/25/8/085004
F. A. Yildirim, C. Ucurum, R. R. Schliewe, W. Bauhofer, R. M. Meixner, H. Goebel, W. Krautschneider, Spin-cast composite gate insulation for low driving voltages and memory effect in organic field-effect transistors Applied Physics Letters. ,vol. 90, pp. 083501- ,(2007) , 10.1063/1.2591314