High speed diamond-based machining of silicon semiconductor die in wafer and packaged form for backside emission microscope detection

摘要: Emission microscopy testing of semiconductor integrated circuits is accomplished from the back side a packaged die or wafer but selectively milling surface using high speed (e.g., 40,000-60,000 rpm) tool having 150 grit 0.125 inch diameter laterally translated at 3 inches per minute and taking cuts up to approximately 0.00025 (6 microns). In die, trench first milled in molding material holding package surrounding so that can momentarily pause switch directions off face. The be thinned less than 200 microns for emission testing.