Contact structure and extension formation for III-V nFET
作者： Alexander Reznicek , Veeraraghavan S. Basker
DOI:
关键词: Silicon 、 Substrate (electronics) 、 Electronic engineering 、 Materials science 、 Leakage (electronics) 、 Optoelectronics
摘要: FinFET devices including III-V fin structures and silicon-based source/drain regions are formed on a semiconductor substrate. Silicon is diffused into the to form n-type junctions. Leakage through substrate addressed by forming p-n junctions adjoining isolating under channel regions.
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