Magnetic switching control in Co/TiO2 bilayer and TiO2:Co thin films for Magnetic-Resistive Random Access Memories (M-RRAM)
作者： Heiddy P. Quiroz , Jorge A. Calderón , A. Dussan
DOI: 10.1016/J.JALLCOM.2020.155674
关键词: Thin film 、 Bilayer 、 Resistive random-access memory 、 Charge carrier 、 Magnetic field 、 Giant magnetoresistance 、 Materials science 、 Resistive touchscreen 、 Condensed matter physics 、 Magnetic semiconductor
摘要: … the TiO 2 matrix, respect to their resistive properties and quality of memory devices, have been reported [13]. However, the innovation in the RRAM … of Co/TiO 2 Bilayer and TiO 2 :Co thin …
sci-hub.st 参考文章(25)
S.P. Heluani, D. Comedi, M. Villafuerte, G. Juárez, Polaron variable range hopping in thin films Physica B: Condensed Matter. ,vol. 398, pp. 305- 308 ,(2007) , 10.1016/J.PHYSB.2007.04.033
B. J. Choi, D. S. Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, B. Reichenberg, S. Tiedke, Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition Journal of Applied Physics. ,vol. 98, pp. 033715- ,(2005) , 10.1063/1.2001146
P. Telek, S. Hasenohrl, J. Soltys, I. Vavra, M. Drzik, J. Novak, Design, preparation and properties of spin-LED structures based on InMnAs international conference on advanced semiconductor devices and microsystems. pp. 175- 178 ,(2010) , 10.1109/ASDAM.2010.5666329
Ilia Valov, Rainer Waser, John R Jameson, Michael N Kozicki, Electrochemical metallization memories—fundamentals, applications, prospects Nanotechnology. ,vol. 22, pp. 254003- 254003 ,(2011) , 10.1088/0957-4484/22/25/254003
M. R. Ranade, A. Navrotsky, H. Z. Zhang, J. F. Banfield, S. H. Elder, A. Zaban, P. H. Borse, S. K. Kulkarni, G. S. Doran, H. J. Whitfield, Energetics of nanocrystalline TiO2 Proceedings of the National Academy of Sciences of the United States of America. ,vol. 99, pp. 6476- 6481 ,(2002) , 10.1073/PNAS.251534898
A journey towards reliability improvement of TiO2 based Resistive Random Access Memory: A review Microelectronics Reliability. ,vol. 54, pp. 541- 560 ,(2014) , 10.1016/J.MICROREL.2013.11.013
S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D.-S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J.-S. Kim, J. S. Choi, B. H. Park, Reproducible resistance switching in polycrystalline NiO films Applied Physics Letters. ,vol. 85, pp. 5655- 5657 ,(2004) , 10.1063/1.1831560
A. Dussan, R. H. Buitrago, Transport mechanism in lightly doped hydrogenated microcrystalline silicon thin films Journal of Applied Physics. ,vol. 97, pp. 043711- ,(2005) , 10.1063/1.1848193
Nevill F. Mott, E. A. Davis, Kurt Weiser, Electronic processes in non-crystalline materials ,(1940)
Y. Yamada, K. Ueno, T. Fukumura, H. T. Yuan, H. Shimotani, Y. Iwasa, L. Gu, S. Tsukimoto, Y. Ikuhara, M. Kawasaki, Electrically induced ferromagnetism at room temperature in cobalt-doped titanium dioxide. Science. ,vol. 332, pp. 1065- 1067 ,(2011) , 10.1126/SCIENCE.1202152