作者: Siao Li Liew , Wei Wang , Surani Bin Dolmanan , Glen Tai Wei Goh , Dongzhi Chi
DOI: 10.1016/J.MATCHEMPHYS.2013.11.018
关键词: Volumetric flow rate 、 Materials science 、 Monoclinic crystal system 、 Analytical chemistry 、 Nanocrystalline material 、 Thin film 、 Sputtering 、 Oxygen 、 Photocurrent 、 Electrolyte
摘要: Abstract Thin film WO 3 photoanodes were prepared by reactive sputtering in Ar and O 2 gas mixtures of various flow rate combinations. Furnace annealed films nanocrystalline monoclinic with (002), (020) (200) plane orientations. Water oxidation 0.33 M H SO 4 electrolyte under simulated solar illumination showed that deposited highest combinations exhibited photocurrent 4.1 mA cm −2 (at 1.3 V vs Ag/AgCl) compared to 3–3.8 mA cm for lower The higher photocurrents ascribed bulk resistivity charge transfer resistance at the /electrolyte interface. These consisted randomly oriented planes contrast preferentially orientated (002) which highly resistive poorer responses. results interpreted terms effects Ar:O on distribution oxygen vacancies formation crystallographic shear sputtered films.