Method and circuit for trimming the internal timing conditions of a semiconductor memory device

摘要: A method and circuit to trim the internal timing conditions for a semiconductor memory device including matrix portions allowing reading of data stored in wherein such include an ATD generator detecting each transition plurality address terminals produce synchronization signal, sense amplifier which receives equalization signal EQU from activated by output buffers enabled OUTLATCH produced receiving signal. The length signals is automatically trimmed according corresponding code contained portion device.