Influence of Source/Drain Electrodes on the Properties of Zinc Tin Oxide Transparent Thin Film Transistors
作者： Tae Young Ma , Mu Hee Cho
DOI: 10.4313/JKEM.2015.28.7.433
关键词: Threshold voltage 、 Materials science 、 Indium 、 Optoelectronics 、 Wafer 、 Thin-film transistor 、 Indium tin oxide 、 Conductivity 、 Inorganic chemistry 、 Electrode 、 Aluminium
摘要: Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using Si wafers as gate electrodes. Indium (In), aluminum (Al), indium (ITO), silver (Ag), and gold (Au) employed for source drain electrodes, the mobility threshold voltage of ZTO TTFTs observed a function electrode. The adopting In electrodes showed highest lowest voltage. It was shown that Ag Au are not suitable TTFTs. As results this study, it is considered interface properties electrode/ZTO more influential in than conductivity
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