Analysing organic transistors based on interface approximation

摘要: Temperature-dependent characteristics of organic transistors are analysed thoroughly using interface approximation. In contrast to amorphous silicon transistors, it is characteristic that the accumulation layer concentrated on first monolayer, and appropriate consider charge rather than band bending. On basis this model, observed hexamethylenetetrathiafulvalene (HMTTF) dibenzotetrathiafulvalene (DBTTF) with various surface treatments analysed, trap distribution extracted. turn, starting from a simple exponential distribution, we can reproduce temperature-dependent transistor as well gate voltage dependence activation energy, so investigate aspects self-consistently under Small deviation such an ideal operation discussed assuming presence energetically discrete level, which leads hump in transfer characteristics. The contact resistance estimated by measuring up linear region.