Nonmetal-metal-nonmetal transition and large negative magnetoresistance in (Ga, Mn)As/GaAs
作者： A. Oiwa , S. Katsumoto , A. Endo , M. Hirasawa , Y. Iye
DOI: 10.1016/S0038-1098(97)00178-6
关键词: Metal 、 Ferromagnetism 、 Electron localization function 、 Chemistry 、 Nonmetal 、 Magnetoresistance 、 Electrical resistivity and conductivity 、 Anderson impurity model 、 Condensed matter physics 、 Magnetization
摘要: Abstract We have studied magnetic and transport properties of a series Ga 1−x Mn x As GaAs samples with different concentrations (x = 0.015−0.071. For content higher than about 0.02, carrier(hole)-induced ferromagnetism is observed. Samples 0.035 0.043 behave as ferromagnetic dirty metals. With further increase above ∼ 0.05, the zero-field resistivity turns semiconducting temperature dependence. Very large negative magnetoresistance observed in non-metallic near metal-nonmetal transitions both low high regimes.
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