Epitaxial growth of rare gas crystals
作者： H.M. Kramer , J.A. Venables
DOI: 10.1016/0022-0248(72)90265-5
关键词: Molecular physics 、 Xenon 、 Epitaxy 、 Materials science 、 Stacking-fault energy 、 Crystallography 、 Rare gas 、 Limit (mathematics)
摘要: Abstract Rare gas crystals can be grown epitaxially on various substrates. Some results which were obtained by in situ TEM are presented. An attempt is made to derive from these an upper limit for the stacking fault energy of xenon.
elsevier.com
sci-hub.se 参考文章(2)
M B Doran, I J Zucker, Higher order multipole three-body van der Waals interactions and stability of rare gas solids Journal of Physics C: Solid State Physics. ,vol. 4, pp. 307- 312 ,(1971) , 10.1088/0022-3719/4/3/006
W. A. Jesser, Misfit Accommodation by Imperfect Dislocations in Epitaxial fcc Films Journal of Applied Physics. ,vol. 41, pp. 39- 41 ,(1970) , 10.1063/1.1658353