Electrical and optical investigation on doping of II-VI compounds using radioactive isotopes

摘要: Using radioactive isotopes of shallow dopants (Ag, As, Rb) as well native or isoelectronic elements (Se, Te, Cd, Sr) which were incorporated host atoms and then transmuted into relevant (transmutation doping) we investigated doping phenomena occurring in the wide band gap II–VI compounds CdTe, ZnTe, ZnSe SrS by classical methods semiconductor physics: Hall effect, C–V photoluminescence measurements. Thus, could assign unambiguously defect features electrical measurements to extrinsic means half lives decay. In As doped samples observed two states: a metastable effective mass like state deep state. The occurrence latter is always linked with high resistivity crystals. transmutation experiments reveal that so-called self-compensation typical for gab can be overcome when thermal treatment dopant incorporation time separated from its activation, achieved using at room temperature. Under these conditions found an almost one-to-one efficiency relative implanted dose. investigations are contribution understanding compensation due interactions between defects during conventional treatments.