Morphological and optical comparison of the Si doped GaN thin film deposited onto the transparent substrates

摘要: The aim of this paper is to expand the body knowledge about silicon doped gallium nitride thin films deposited on different substrates. physical properties Si GaN glass and polyethylene terephthalate substrates by thermionic vacuum arc which plasma production technique were investigated. Thermionic method a producing pure material plasma. analyzed using following methods devices: atomic force microscopy, x-ray diffraction device, spectroscopic ellipsometer energy dispersive spectroscopy detector. produced are in (113) orientation. thicknesses refractive index determined Cauchy dispersion model. Surface morphologies homogenous low roughness. Our analysis showed that present important advantages for optical industrial applications.