Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates
作者： M. Meuris , B. Jaeger , J. Steenbergen , R. Bonzom , M. Caymax
DOI: 10.1007/978-3-540-71491-0_15
关键词: Dopant 、 Germanium 、 State density 、 Passivation 、 Electron mobility 、 Gate dielectric 、 Optoelectronics 、 Materials science 、 Dielectric 、 Insulator (electricity)
摘要: A key challenge in the engineering of Ge MOSFETs is to develop a proper surface passivation technique prior high-κ dielectric deposition obtain low interface state density and high carrier mobility. review on some possible treatments passivate discussed. Another important aspect activation p- n-type dopants form active areas devices. Finally, deep submicron n- p-FET devices fabricated with this germanium-on-insulator substrates, yield promising device characteristics, showing feasibility these substrates.
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