Word line connection for memory device and method of making thereof
作者： Seje Takaki
DOI:
关键词: Optoelectronics 、 Line (text file) 、 Stack (abstract data type) 、 Word (computer architecture) 、 Electrical conductor 、 Materials science 、 Substrate (printing) 、 Electronic engineering 、 Connection (vector bundle) 、 Cable gland 、 First contact
摘要: A three-dimensional monolithic memory device includes at least one region and a plurality of contact regions each including stack an alternating conductive word line layers insulating located over substrate, where the stacks in are separated from another by material, bridge connector material extending between first layer second region, extends level substantially parallel to major surface substrate that is different than level.
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