Printing minimum width semiconductor features at non-minimum pitch and resulting device
作者： Norman Chen , Sonia Ghosh , Randy Mann , Shaowen Gao
DOI:
关键词: Semiconductor 、 Materials science 、 Optics 、 Layer (electronics)
摘要: Methods for forming a semiconductor layer, such as metal1 having minimum width features separated by distance greater than pitch, and the resulting devices are disclosed. Embodiments may include determining first shape second within wherein between is an intervening shape, designating dummy at pitch from shape.
lens.org 参考文章(39)
Yuan-Te Hou, Lee-Chung Lu, Li-Chun Tien, Shyue-Shyh Lin, Dian-Hau Chen, Non-hierarchical metal layers for integrated circuits ,(2011)
Zvi Or-Bach, Zeev Wurman, Brian Cronquist, Deepak C. Sekar, Novel semiconductor system and device ,(2012)
Ji-Myoung Lee, Young-Soo Song, Bo-Young Lee, Jun-Min Lee, Dummy cell array for fin field-effect transistor device and semiconductor integrated circuit including the dummy cell array ,(2014)
Abdurrahman Sezginer, Method, system, and program product for routing an integrated circuit to be manufactured by sidewall-image transfer ,(2009)
Geert Van Der Plas, Paul Marchal, Nikolaos Minas, Erik-Jan Marinissen, Method and device for testing tsvs in a 3d chip stack ,(2010)
Dong-Hwa Kwak, So-wi Jin, Jae-Kwan Park, Byung-Jun Hwang, Jang-Ho Park, Nam-su Lim, Methods of manufacturing nand flash memory devices ,(2014)
Donald Plumton, Thomas J. Aton, Integrated circuit having interleaved gridded features, mask set, and method for printing ,(2008)
Hiroki Shimano, Toshinori Morihara, Kazutami Arimoto, Semiconductor integrated circuit device and method of manufacturing the same, and cell size calculation method for DRAM memory cells ,(2001)
Dong-Woon Park, Hyun-Jong Lee, Yong-Kug Bae, Si-Young Choi, Method of forming pattern, reticle, and computer readable medium for storing program for forming pattern ,(2011)
Wilfried Ernst-August Haensch, Josephine B. Chang, Michael A. Guillom, Fin-Last Replacement Metal Gate FinFET ,(2011)