作者: Jia Li , Heyan Liu , Zhidong Zhang , Shaoling Zhang , Xuewen Xu
DOI: 10.1016/J.JALLCOM.2014.02.009
关键词: Ferrimagnetism 、 Antiferromagnetism 、 Crystallography 、 Electronic structure 、 Condensed matter physics 、 Metal 、 Heusler compound 、 Doping 、 Materials science 、 Magnetization 、 Ferromagnetism
摘要: Abstract The electronic structure, magnetic properties and occupation feature of DO 3 -type Heusler compounds (Cr 1 − x Mn ) Si Fe ( = n /12, = 0, 2, 4, 6, 8, 10, 12) have been investigated by first principles calculations. Cr Si, – 4/12 2/12 6/12 are predicted to be half-metallic ferrimagnets. compound is antiferromagnet, which applicable spintronic devices due its zero magnetization. atoms prefer occupy the (A,C) sites while tend B site, indicating that doping affected strongly inter-atom hybridization d electrons number not a determining factor. In addition, results confirm uniformity rule A site equivalent C enter two sublattice uniformly. more symmetric surroundings atom coordination in contrast leads typical splitting peaks. total moment for all doped agrees well with Slater–Pauling rule. coexisting Cr(B) Cr(A,C) show antiferromagnetic coupling character both Si. Mn(B) Mn(A,C) Fe(B) Fe(A,C) ferromagnetic