Ion-assisted deposition of CN and SiCN films
作者： Zhigang He , George Carter , John S Colligon
DOI: 10.1016/0040-6090(96)08556-2
关键词: Deposition (phase transition) 、 Binding energy 、 Nitrogen 、 Ion 、 X-ray photoelectron spectroscopy 、 Ternary operation 、 Carbon 、 Inorganic chemistry 、 Chemistry 、 Silicon
摘要: Abstract Synthesis of CN and SiCN films was achieved by performing an ion sputtering deposition carbon silicon in a nitrogen atmosphere, with simultaneous bombardment substrates upon which were grown. The relationship between the conditions composition resultant identified using RBS. chemical shifts C 1s N binding energy observed through XPS studies revealed that atoms incorporated into chemically bonded to and, ternary case, silicon. Hardness measurements also carried out.
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