作者: Romualdo A. Ferreyra , Congyong Zhu , Ali Teke , Hadis Morkoç
DOI: 10.1007/978-3-319-48933-9_31
关键词: Microwave amplifiers 、 Nitride semiconductors 、 Material properties 、 Nitride 、 Group (periodic table) 、 Semiconductor 、 High voltage 、 Materials science 、 Optoelectronics 、 Ternary operation
摘要: Optical, electrical, mechanical, and thermal properties of group III nitrides, inclusive AlN, GaN, InN their ternary quaternary alloys, are discussed. The driving force for nitride semiconductors is important applications in optoelectronics, microwave amplifiers, high voltage power switches. Owing to the aforementioned applications, fundamental each binary, as well alloys that have been acquired, discussed this chapter. In general, an appropriate assessment material any not straightforward begin with family no exception, particularly considering nitrides prepared on foreign substrates low-cost native yet available. Understandably, precise measurements thermal, electrical optical semiconductor imperative further advances. Notwithstanding great progress has already made understand exploit especially reliable data AlN still state evolution, naturally subject some controversy. This is, part, a consequence having performed samples widely varying quality. When possible, spurious discrepancies disregarded. For materials, too few available yield consensus, which case simply reported. Defects GaN-based nanostructures also