作者: Somphonh P. Phivilay , Charles A. Roberts , Alexander A. Puretzky , Kazunari Domen , Israel E. Wachs
DOI: 10.1021/JZ401884C
关键词: Materials science 、 Raman spectroscopy 、 Thin film 、 Photochemistry 、 Low-energy ion scattering 、 X-ray photoelectron spectroscopy 、 Nitride 、 Chemical engineering 、 Spectroscopy 、 Surface layer 、 Water splitting
摘要: The supported (Rh2–y Cr y O3)/GaN photocatalyst was examined as a model nitride photocatalyst system to assist in the development of fundamental structure–photoactivity relationships for UV activated water splitting. Surface characterization of the outermost surface layers by high-sensitivity low energy ion scattering (HS-LEIS) and high-resolution X-ray photoelectron spectroscopy (HR-XPS) revealed that the GaN support consists of a GaO x outermost surface layer on a thin film of GaO x N y. HR-XPS demonstrates that the supported …