Topological disorder an amorphous semiconductors: a real-space renormalisation for Husimi cacti alloys

作者: E V Anda , S S Makler , M A Continentino , P M de Oliveira

DOI: 10.1088/0022-3719/17/23/011

关键词: PhysicsAmorphous solidSpace (mathematics)Amorphous semiconductorsSemiconductorDecimationCondensed matter physicsTetrahedronIdeal (order theory)

摘要: Decimation techniques have already been used successfully to describe the densities of states several types disordered linear chains. In this paper decimation procedure is extended for case Husimi cacti. These lattices are widely as approximations continuous-random-network model an ideal amorphous tetrahedral bonded semiconductor. The cacti different concentrations sixfold and fivefold rings calculated. effects presence odd on in particular band edges discussed.

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