作者: Petr Markov , Robert E. Marvel , Hiram J. Conley , Kevin J. Miller , Richard F. Haglund
DOI: 10.1021/ACSPHOTONICS.5B00244
关键词: Phase transition 、 Semiconductor 、 Monoclinic crystal system 、 Excitation 、 Silicon 、 Materials science 、 Optoelectronics 、 Joule heating 、 Photonics 、 Rutile
摘要: We demonstrate a hybrid silicon–vanadium dioxide (Si-VO2) electro-optic modulator that enables direct probing of both the electrically triggered semiconductor-to-metal phase transition in VO2 and reverse from metal to semiconductor. By using two-terminal in-plane electrical switch atop single-mode silicon waveguide, change can be initiated probed optically, separating excitation measurement processes simplifying analysis metal-to-semiconductor dynamics. record switch-on time for high-speed transition, with switching times less than 2 ns, quantify slower inverse which is dominated by thermal dissipation relaxation metallic rutile lattice monoclinic semiconducting phase. limiting current through reduce Joule heating, we enable as fast 3 ns.