Free-electron behaviour of carriers in antimony-doped tin(IV) oxide: A study by electron spectroscopy
作者： P.A. Cox , R.G. Egdell , C. Harding , A.F. Orchard , W.R. Patterson
DOI: 10.1016/0038-1098(82)90285-X
关键词: Electron spectroscopy 、 Density of states 、 Free electron model 、 Doping 、 X-ray photoelectron spectroscopy 、 Analytical chemistry 、 Chemistry 、 Tin 、 Antimony 、 Oxide
摘要: … Conduction electrons introduced by doping 3% antimony into tin… TIN(IV) OXIDE (SnO2) heavily doped with antimony is a … introduced by doping are not trapped by the antimony ions, but …
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