Method of manufacturing a semiconductor device with an isolation region and a device manufactured by the method
作者： Jan Sonsky
DOI:
关键词: Engineering 、 Etching (microfabrication) 、 Optoelectronics 、 Trench 、 Active devices 、 Si substrate 、 Isolation (database systems) 、 Semiconductor device 、 Electronic engineering 、 Shallow trench isolation 、 Layer (electronics)
摘要: A method of manufacturing a semiconductor device includes forming trench isolation structures, exposing some the structures 28 to leave others 30 masked, and then selectively etching buried layer form cavity 32 under an active region 34 . The is supported by support regions in exposed trenches may be SiGe on Si substrate.
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