作者: Sunanda Sharda , Neha Sharma , Pankaj Sharma , Vineet Sharma
DOI: 10.1007/S11664-013-2714-9
关键词: Infrared spectroscopy 、 Silicon photonics 、 Optoelectronics 、 Raman amplification 、 Optical communication 、 Thin film 、 Chalcogenide 、 Absorption edge 、 Infrared 、 Materials science 、 Optics
摘要: Chalcogenide glasses find extensive applications in infrared (IR) devices and optical communication. Optical parameters of Sb10Se65Ge25−yIny thin films, deposited by the thermal evaporation technique, have been analyzed using ultraviolet–visible-near IR spectroscopy. The transitions forbidden gap are indirect. effect indium (In) alloying on nonlinear has studied. A shift absorption edge towards higher wavelength shows that width localized states changes, which affects system. high nonlinearity these makes them suitable for regeneration Raman amplification.