Method for measuring fracture toughness of wafer-bonded interfaces with high spatial resolution

作者: Martin Bring , Anke Sanz-Velasco , Peter Enoksson

DOI: 10.1088/0960-1317/16/6/S11

关键词: Materials scienceTest methodComposite materialImage resolutionFracture toughnessCantileverRafterStructural engineeringWafer bondingWaferSpatial variability

摘要: A test method for adhesion quantification with high spatial resolution of bonded areas is presented. The based on a three-point bend chevron and applicable especially small structures. Using an ordinary surface profiler the suitable determining mode I fracture toughness, KIc, from 5 × µm2 to 20 in size. compared quantitatively double cantilever beam (DCB) test. Measurements show that average KIc value determined using this close accordance values measured DCB but larger spread observed which may be dedicated real variation shown by higher presented method.

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