Single-Mode Stimulated Emission in a Quantum-Wire Laser Fabricated by Cleaved-Edge Overgrowth

摘要: We have used the molecular beam growth technique, we call Cleaved Edge Overgrowth to fabricate highly efficient lasers, which operate in ID quantum limit. The active region of our laser consists wires that form at T-shaped intersections 7 nm wide GaAs wells grown along [001] and after an situ cleave [110] crystal axis. These are, turn, embedded a dielectric waveguide, confines optical mode vicinity wires. precise control wire dimensions achievable this way allows observation stimulated emission from lowest exciton state optically pumped devices. interpretation observed response is due recombination based on near spectral constancy over almost 3 orders magnitude excitation power low luminescence single lasing line. implied absence band-gap renormalization effects suggests enhanced stability gas phase 1D. This consistent with red-shift photoluminescence signal respect well about 17 meV strongly exceeds shift predicted by theory for free carrier transitions indicates enhancement 1D binding energy more than 50%.