Energy conversion efficiency in nanotube optoelectronics.

摘要: We present theoretical performance estimates for nanotube optoelectronic devices under bias. Current-voltage characteristics of illuminated p-n junctions are calculated using a self-consistent nonequilibrium Green's function approach. Energy conversion rates reaching tens percent predicted incident photon energies near the band gap energy. In addition, energy rate increases as diameter is reduced, even though quantum efficiency shows little dependence on radius. These results indicate that not limiting factor use nanotubes in optoelectronics.