EFFECTS OF ARGON+ ION BOMBARDMENT ON A PLATINUM/ZIRCONIUM DIOXIDE/IRIDIUM RESISTIVE SWITCHING MEMORY CELL
作者： GWANGTAEK OH , INROK HWANG , JIN-SOO KIM , JINSIK CHOI , JONG WAN SON
DOI: 10.1142/S1793604711001671
关键词: Platinum 、 Ion 、 Surface finish 、 Chemical state 、 Materials science 、 Iridium 、 Argon 、 Analytical chemistry 、 Zirconium dioxide 、 Electric field
摘要: We have fabricated Pt/ZrO2/Ir memory cells with pristine and Ar+ ion bombarded ZrO2 films, which show unipolar resistive switching behaviors. bombardment induces change in surface morphology chemical states of films. found that forming voltage significantly decreases a cell whose film shows oxygen vacancy like defects the largest root-mean-square (RMS) roughness. It seems process may be more easily induced an higher RMS roughness mainly due to locally enhanced electric field region defects.
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