Anisotropic magnetoresistance and nonvolatile memory in superlattices of La 2/3 Sr 1/3 MnO 3 and antiferromagnet Sr 2 IrO 4
作者： Hui Xu , Haoliang Huang , Qingmei Wu , Zhicheng Wang , Zhangzhang Cui
DOI: 10.1007/S10853-020-04585-8
关键词: Exchange bias 、 Coercivity 、 Spintronics 、 Hysteresis 、 Antiferromagnetism 、 Materials science 、 Magnetic field 、 Superlattice 、 Magnetoresistance 、 Condensed matter physics
摘要: … Sr 2 IrO 4 is a rare example of antiferromagnetic semiconductor oxide and has been … in anisotropic magnetoresistance-based spintronics. However, the anisotropic magnetoresistance of …
springer.com
sci-hub.se 参考文章(38)
Neelabh Srivastava, P. C. Srivastava, Heavy ion induced modifications on morphological, magnetic and magneto-transport behaviour of exchange-biased Fe/NiO and NiO/Fe bilayers with Si substrate for spintronic applications Journal of Materials Science. ,vol. 50, pp. 7610- 7626 ,(2015) , 10.1007/S10853-015-9321-5
P. Wadley, B. Howells, J. elezny, C. Andrews, V. Hills, R. P. Campion, V. Novak, K. Olejnik, F. Maccherozzi, S. S. Dhesi, S. Y. Martin, T. Wagner, J. Wunderlich, F. Freimuth, Y. Mokrousov, J. Kune , J. S. Chauhan, M. J. Grzybowski, A. W. Rushforth, K. W. Edmonds, B. L. Gallagher, T. Jungwirth, Electrical switching of an antiferromagnet. Science. ,vol. 351, pp. 587- 590 ,(2016) , 10.1126/SCIENCE.AAB1031
Chengliang Lu, Shuai Dong, Andy Quindeau, Daniele Preziosi, Ni Hu, Marin Alexe, Dual gate control of bulk transport and magnetism in the spin-orbit insulator Sr2IrO4 Physical Review B. ,vol. 91, pp. 104401- ,(2015) , 10.1103/PHYSREVB.91.104401
Claude Chappert, Albert Fert, Frédéric Nguyen Van Dau, The emergence of spin electronics in data storage Nature Materials. ,vol. 6, pp. 813- 823 ,(2007) , 10.1038/NMAT2024
S Fujiyama, H Ohsumi, K Ohashi, D Hirai, BJ Kim, T Arima, M Takata, H Takagi, Spin and orbital contributions to magnetically ordered moments in 5d layered perovskite Sr2IrO4. Physical Review Letters. ,vol. 112, pp. 016405- ,(2014) , 10.1103/PHYSREVLETT.112.016405
I Fina, X Marti, D Yi, J Liu, JH Chu, C Rayan-Serrao, S Suresha, AB Shick, J Železný, T Jungwirth, J Fontcuberta, R Ramesh, None, Anisotropic magnetoresistance in an antiferromagnetic semiconductor Nature Communications. ,vol. 5, pp. 4671- ,(2014) , 10.1038/NCOMMS5671
C. Wang, H. Seinige, G. Cao, J.-S. Zhou, J. B. Goodenough, M. Tsoi, Temperature dependence of anisotropic magnetoresistance in antiferromagnetic Sr2IrO4 Journal of Applied Physics. ,vol. 117, pp. 1- ,(2015) , 10.1063/1.4913300
B. G. Park, J. Wunderlich, X. Martí, V. Holý, Y. Kurosaki, M. Yamada, H. Yamamoto, A. Nishide, J. Hayakawa, H. Takahashi, A. B. Shick, T. Jungwirth, A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction Nature Materials. ,vol. 10, pp. 347- 351 ,(2011) , 10.1038/NMAT2983
G. Jackeli, G. Khaliullin, Mott Insulators in the Strong Spin-Orbit Coupling Limit: From Heisenberg to a Quantum Compass and Kitaev Models Physical Review Letters. ,vol. 102, pp. 017205- ,(2009) , 10.1103/PHYSREVLETT.102.017205
B. J. Kim, H. Ohsumi, T. Komesu, S. Sakai, T. Morita, H. Takagi, T. Arima, Phase-sensitive observation of a spin-orbital Mott state in Sr2IrO4. Science. ,vol. 323, pp. 1329- 1332 ,(2009) , 10.1126/SCIENCE.1167106