Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering
作者： W. Guo , A. Bondi , C. Cornet , A. Létoublon , O. Durand
DOI: 10.1016/J.APSUSC.2011.10.139
关键词: Crystallite 、 Annealing (metallurgy) 、 Scattering 、 Epitaxy 、 Crystallography 、 Thermodynamic equilibrium 、 Semiconductor 、 Molecular beam epitaxy 、 Condensed matter physics 、 Diffraction 、 Materials science
摘要: We have investigated quantitatively anti-phase domains (APD) structural properties in 20 nm GaP/Si epilayers grown by molecular beam epitaxy, using fast, robust and non-destructive analysis methods. These analyses, including atomic force microscopy X-ray diffraction, are applied to samples various epitaxy growth modes. Roughness, lateral crystallite size of the epilayer, ratio antiphase their relationship discussed. It is shown that both these methods useful clarify physical mechanisms occurring during heterogeneous growth. Low temperature migration enhanced found guarantee smoother surface than conventional epitaxy. Effect annealing on boundaries (APBs) thermodynamics The modification thermodynamic equilibrium through a thermal activation APBs motion expected play an important role dynamic evolution surfaces
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