Effect of tin content on the electrical and optical properties of sprayed silver sulfide semiconductor thin films

作者: R. Boughalmi , A. Boukhachem , I. Gaied , K. Boubaker , M. Bouhafs

DOI: 10.1016/J.MSSP.2013.05.019

关键词: Analytical chemistryElectrical resistivity and conductivityDopingTinThin filmSilver sulfideSubstrate (electronics)Materials scienceInorganic chemistryDirect and indirect band gapsSilver acetateMechanical engineeringGeneral Materials ScienceMechanics of MaterialsCondensed matter physics

摘要: Abstract Silver sulfide (Ag2S) thin films have been deposited on glass substrates by t spray pyrolysis using an aqueous solution which contains silver acetate and thiourea as precursors. The depositions were carried out at a substrate temperature of 250 °C. Structural studies means X-ray diffraction show that all tin (Sn)-doped Ag2S crystallized in monoclinic space group with noticeable changes the crystallites' orientation. discussion some structural calculated constants has made Sn doping terms microhardness measurements. Moreover, optical analysis via transmittance, reflectance well photocurrent reveals direct band gap energy (Egd) decreases (Egd varies from 2.34 to 2.16 eV) indirect (Egi) increases (Egi 0.98 1.09 eV) slightly function content. Electrical study shows electrical conductivity proves thermal activation conduction.

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